Meyer–Neldel rule for dark current in charge-coupled devices

Meyer-Neldel rule for dark current in charge-coupled devices

Event Pileup in Charge-coupled Devices

The problem of event pileup in single-photonÈcounting CCD cameras (e.g., in the X-ray regime) is discussed, and a solution to the problem is proposed. The resulting pileup equation includes the e†ects of grade migration and presents itself as a nonlinear modiÐcation to the standard integral equation used by forward-folding spectral-Ðtting programs. The e†ectiveness of the model is demonstrated ...

Radiation damage in charge-coupled devices.

Due to their high sensitivity and signal-to-noise ratio, charge-coupled devices (CCDs) have been the preferred optical photon detectors of astronomers for several decades. CCDs are flown in space as the main detection instrument on several well-known missions, such as the Hubble Space Telescope, XMM-Newton or the Cassini Probe. Also, CCDs are frequently used in satellite star trackers which pro...

Inhibition of charge packet broadening in GaAs charge-coupled devices

Computer simulation of charge transport in GaAs resistive-gate charge-coupled devices is reported. The simulation has been performed for 10 /1-m finger spacings, doping concentrations in the range of I X 10_1 X 10 cm -3, effective channel thicknesses 0.1-1.0 ,urn, lateral applied fields 3-10 kV/cm, and charge packet sizes 5%-100% offull bucket capacity. Inhibition of charge packet broadening du...

Charge Transfer in Overlapping Gate Charge-Coupled Devices

A detailed numerical simulation of the free charge trsnrfer in overlapped gate charge-coupled devices (CCD) is presented. The transport dynamics are analyzed in terms of thermal diffusion, self-induced fields, and fringing fields under all the relevant electrodes and the interelectrode regions with time-varying gate potentials. The results of the charge trmwfer with clifferent clocking schemes ...